onsemi PowerTrench N-Channel MOSFET, 950 mA, 25 V, 6-Pin SOT-363 (SC-70) FDG313N

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Sous-total (1 bobine de 3000 unités)*

1 683,00 €

(TVA exclue)

2 037,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
3000 +0,561 €1 683,00 €

*Prix donné à titre indicatif

N° de stock RS:
146-2123
Référence fabricant:
FDG313N
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Maximum Continuous Drain Current

950 mA

Maximum Drain Source Voltage

25 V

Package Type

SOT-363 (SC-70)

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

760 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

1.64 nC @ 4.5 V

Length

2mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Height

1mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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