onsemi PowerTrench N-Channel MOSFET, 950 mA, 25 V, 6-Pin SOT-363 (SC-70) FDG313N

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
146-2123
Référence fabricant:
FDG313N
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Maximum Continuous Drain Current

950 mA

Maximum Drain Source Voltage

25 V

Package Type

SOT-363 (SC-70)

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

760 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Typical Gate Charge @ Vgs

1.64 nC @ 4.5 V

Length

2mm

Width

1.25mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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