onsemi PowerTrench Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin SOIC

Sous-total (1 bobine de 2500 unités)*

737,50 €

(TVA exclue)

892,50 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
2500 +0,295 €737,50 €

*Prix donné à titre indicatif

N° de stock RS:
166-2651
Référence fabricant:
FDS86242
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

150V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

126mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.9nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.81V

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Width

5 mm

Standards/Approvals

No

Length

4mm

Height

1.5mm

Automotive Standard

No

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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