onsemi PowerTrench N-Channel MOSFET, 11.6 A, 30 V, 8-Pin SOIC FDS8880
- N° de stock RS:
- 166-2625
- Référence fabricant:
- FDS8880
- Fabricant:
- onsemi
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 166-2625
- Référence fabricant:
- FDS8880
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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