onsemi Isolated PowerTrench 2 Type N, Type N-Channel MOSFET, 5.5 A, 30 V Enhancement, 8-Pin SOIC FDS6930B

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
Options de conditionnement :
N° de stock RS:
671-0655
Référence fabricant:
FDS6930B
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

5.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface, Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

62mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

3.8nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

5mm

Height

1.5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes