onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

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Informations sur le stock actuellement non accessibles
N° de stock RS:
166-2446
Référence fabricant:
FDS6900AS
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Maximum Continuous Drain Current

6.9 A, 8.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

PowerTrench, SyncFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ, 27 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Series

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.99mm

Number of Elements per Chip

2

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V, 11 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Pays d'origine :
MY

PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor


Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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