onsemi QFET Type P-Channel MOSFET, 1.8 A, 150 V Enhancement, 8-Pin MLP FDMC2523P

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Sous-total (1 paquet de 5 unités)*

6,49 €

(TVA exclue)

7,855 €

(TVA incluse)

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Unité
Prix par unité
le paquet*
5 - 451,298 €6,49 €
50 - 951,118 €5,59 €
100 - 4950,97 €4,85 €
500 - 9950,852 €4,26 €
1000 +0,776 €3,88 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-0387
Référence fabricant:
FDMC2523P
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

150V

Series

QFET

Package Type

MLP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Forward Voltage Vf

-5V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

42W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.95mm

Width

3 mm

Standards/Approvals

No

Length

3mm

Automotive Standard

No

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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