onsemi QFET N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F FQPF6N80C

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
671-5290
Référence fabricant:
FQPF6N80C
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220F

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

51 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

4.7mm

Length

10.16mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

21 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.19mm

Pays d'origine :
MY

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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