onsemi QFET N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK FQB19N20LTM
- N° de stock RS:
- 166-1750
- Référence fabricant:
- FQB19N20LTM
- Fabricant:
- onsemi
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 166-1750
- Référence fabricant:
- FQB19N20LTM
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | QFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 140 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.13 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 27 nC @ 5 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 200 V | ||
Series QFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 140 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.13 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 27 nC @ 5 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- Pays d'origine :
- MY
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