onsemi QFET Type N-Channel QFET MOSFET, 9.5 A, 200 V Enhancement, 3-Pin TO-220F FQPF10N20C

Voir l’ensemble des MOSFETs

Sous-total (1 tube de 50 unités)*

38,20 €

(TVA exclue)

46,20 €

(TVA incluse)

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Dernier stock RS
  • 200 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité
Prix par unité
le tube*
50 +0,764 €38,20 €

*Prix donné à titre indicatif

N° de stock RS:
145-4532
Référence fabricant:
FQPF10N20C
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

QFET MOSFET

Maximum Continuous Drain Current Id

9.5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220F

Series

QFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.36Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

72W

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

20nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

9.19mm

Standards/Approvals

No

Width

4.7 mm

Length

10.16mm

Automotive Standard

No

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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