Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252

N° de stock RS:: 166-0799
Référence fabricant:: IPD100N04S402ATMA1
Fabricant:: Infineon

Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252

Sous-total (1 bobine de 2500 unités)*

2 037,50 €

(TVA exclue)

2 465,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 09 novembre 2026

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Unité	Prix par unité	la bobine*
2500 +	0,815 €	2 037,50 €

*Prix donné à titre indicatif

N° de stock RS:: 166-0799
Référence fabricant:: IPD100N04S402ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS-T2
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	91nC
	Maximum Power Dissipation Pd	150W
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS-T2
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 91nC
	Maximum Power Dissipation Pd 150W
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Statut RoHS non applicable

Pays d'origine :: MY

Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - IPD100N04S402ATMA1

This MOSFET is a high-current switching transistor designed for demanding electronic systems requiring robust thermal and electrical performance. It operates across an extended temperature range and is intended for surface-mount assembly, offering low on-resistance and efficient conduction for power conversion and switching tasks in automotive and industrial environments.

Features and Benefits:

• 2mΩ Rds provides minimal conduction losses
• 100A continuous drain current supports high-load applications
• 150W power dissipation enables substantial heat handling
• 91nC gate charge allows predictable switching control
• 1.2V forward voltage reduces conduction drop under load
• 20V gate tolerance assists protection against overdrive

Applications

• Suitable for automotive power stages requiring AEC‑Q101 qualification
• Used for DC-DC converters in high-current systems
• Ideal for motor-drive switches in automotive electronics
• Can be used for battery management and power distribution
• Used with surface-mount assemblies on compact power modules

What package type should designers accommodate for board layout?

The device comes in a TO‑252 package and is intended for surface mounting, so land patterns should match that three-pin configuration and thermal pad requirements.

How does it perform across temperature extremes?

It maintains operation from -55°C up to 175°C, making it suitable for environments with wide thermal excursions and elevated ambient temperatures.

What polarity and channel arrangement does it use?

It is an N-channel enhancement‑mode device, requiring a positive gate-to-source voltage for conduction and offering standard N-channel switching behaviour.

Are there limits for drain-to-source and gate voltages to consider?

The maximum drain-to-source voltage is 40V and the gate-to-source maximum is 20V, so designs must ensure these limits are not exceeded during transients.