Infineon OptiMOS™-T N-Channel MOSFET, 50 A, 100 V, 3-Pin I2PAK IPI50N10S3L16AKSA1

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Informations sur le stock actuellement non accessibles
N° de stock RS:
857-4685
Référence fabricant:
IPI50N10S3L16AKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Package Type

I2PAK (TO-262)

Series

OptiMOS™-T

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.4mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

49 nC @ 10 V

Length

10mm

Number of Elements per Chip

1

Height

9.25mm

Minimum Operating Temperature

-55 °C

Statut RoHS non applicable

Infineon OptiMOS™T Power MOSFETs


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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