Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON

N° de stock RS:: 165-6879
Référence fabricant:: BSZ086P03NS3EGATMA1
Fabricant:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON

Sous-total (1 bobine de 5000 unités)*

1 495,00 €

(TVA exclue)

1 810,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 04 janvier 2027

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Unité	Prix par unité	la bobine*
5000 +	0,299 €	1 495,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-6879
Référence fabricant:: BSZ086P03NS3EGATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS P
	Package Type	TSDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	69W
	Typical Gate Charge Qg @ Vgs	43.2nC
	Forward Voltage Vf	-1.1V
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Standards/Approvals	No
	Length	3.4mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS P
	Package Type TSDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 69W
	Typical Gate Charge Qg @ Vgs 43.2nC
	Forward Voltage Vf -1.1V
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Standards/Approvals No
	Length 3.4mm
	Automotive Standard No

Statut RoHS non applicable

Pays d'origine :: CN

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ086P03NS3EGATMA1

This MOSFET is a P‑channel enhancement device designed for high‑current switching in compact surface‑mount assemblies. It operates across a wide temperature range suitable for demanding electronic environments and is built to handle significant drain currents and power dissipation. The package is a low‑profile 8‑pin TSDSON for efficient PCB mounting and thermal performance.

Features and Benefits:

• Low on‑resistance reduces conduction losses during high currents
• 40A continuous drain current supports heavy load switching
• 69W maximum power dissipation enables higher power handling
• 43.2nC typical gate charge balances switching speed and drive effort
• 25V gate tolerance allows robust gate‑drive margins
• 30V drain‑source rating suits moderate voltage system designs

Applications

• Suitable for point‑of‑load power conversion modules
• Ideal for synchronous buck converter switches
• Used with battery management circuits in power systems
• Can be used for motor‑driver low‑side/power‑path control
• Appropriate for telecoms and server power rails

What thermal extremes can it withstand during operation?

It is specified to operate from -55°C up to 150°C, accommodating wide ambient and junction variations.

How many pins and which mounting method does it use?

The device uses an 8‑pin footprint and is intended for surface mounting in a TSDSON package.

What electrical characteristic limits conduction losses?

The device’s maximum drain‑source resistance is 13.4mΩ, which governs on‑state voltage drop and efficiency.

What gate‑driving considerations are relevant for switching design?

With a typical gate charge of 43.2nC and a maximum gate‑source rating of 25V, drive circuitry must supply sufficient charge while staying within voltage limits.