Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NWH6327XTSA1
- N° de stock RS:
- 165-5863
- Référence fabricant:
- BSS214NWH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
255,00 €
(TVA exclue)
309,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 000 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,085 € | 255,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5863
- Référence fabricant:
- BSS214NWH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS214NWH6327XTSA1
This MOSFET is a compact N-channel enhancement device designed for surface-mount power switching and management in constrained electronic assemblies. It operates across a wide ambient span suited to demanding temperature conditions and is engineered for low-voltage, low-current applications where efficient conduction and rapid gate response are required.
Features and Benefits:
• 20V drain-source rating enables low-voltage power designs
• 250mΩ Rds(on) reduces conduction losses in switching paths
• 0.8nC typical gate charge supports fast gate transitions
• 1.5A continuous drain current handles modest load currents
• 500mW maximum dissipation allows safe thermal headroom
• 12V gate threshold maximises gate-drive flexibility
• 250mΩ Rds(on) reduces conduction losses in switching paths
• 0.8nC typical gate charge supports fast gate transitions
• 1.5A continuous drain current handles modest load currents
• 500mW maximum dissipation allows safe thermal headroom
• 12V gate threshold maximises gate-drive flexibility
Applications
• Suitable for automotive sensor power switching
• Ideal for battery management and load disconnects
• Used with control logic in distributed power modules
• Can be used for small DC-DC converter stages
• Suitable for portable device power-path switching
• Ideal for battery management and load disconnects
• Used with control logic in distributed power modules
• Can be used for small DC-DC converter stages
• Suitable for portable device power-path switching
What thermal range can it tolerate in extreme environments?
It is specified to function from -55°C up to 150°C, permitting use in high-temperature automotive zones.
How compact is it for high-density board layouts?
The component is supplied in a tiny SC-70 surface-mount package measuring 2mm by 1.25mm with a low profile of 0.8 mm.
What gate-drive limits should designers observe?
The gate-source voltage must not exceed 12V to avoid overstressing the gate dielectric.
How does the device behave under continuous load?
It supports a steady drain current of 1.5A while dissipating up to 500mW within its thermal constraints.
Liens connexes
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