Infineon OptiMOS 2 N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70 BSS816NWH6327XTSA1

N° de stock RS:: 110-7113
Référence fabricant:: BSS816NWH6327XTSA1
Fabricant:: Infineon

Infineon OptiMOS 2 N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70 BSS816NWH6327XTSA1

Sous-total (1 paquet de 300 unités)*

18,90 €

(TVA exclue)

22,80 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

30 900 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le paquet*
300 +	0,063 €	18,90 €

*Prix donné à titre indicatif

N° de stock RS:: 110-7113
Référence fabricant:: BSS816NWH6327XTSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.4A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-70
	Series	OptiMOS 2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	240mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.6nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	-8V, +8V
	Maximum Operating Temperature	175°C
	Width	1.25mm
	Standards/Approvals	No
	Length	2mm
	Height	800μm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.4A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-70
	Series OptiMOS 2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 240mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.6nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs -8V, +8V
	Maximum Operating Temperature 175°C
	Width 1.25mm
	Standards/Approvals No
	Length 2mm
	Height 800μm
	Automotive Standard AEC-Q101

Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 1.4A Maximum Continuous Drain Current - BSS816NWH6327XTSA1

This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in automotive and industrial electronic systems. It operates across an extended temperature range and is intended for surface-mount applications where a small footprint and modest power handling are required.

Features and Benefits:

• Low on-resistance 240 mΩ reduces conduction losses and heat
• Maximum drain current 1.4A enables moderate load switching
• Drain-source voltage rating 20V supports typical automotive rails
• Gate charge 0.6 nC allows faster gate drive and reduced switching loss
• Power dissipation 500 mW permits sustained operation under light load
• Gate-source limit 8V protects against excessive drive voltages

Applications

• Suitable for switch stages in automotive sensor modules
• Ideal for load switching in 12V auxiliary circuits
• Used with battery-management peripherals requiring a small footprint
• Can be used for signal‑level power control in infotainment systems
• Applicable to compact motor‑drive gate stages for low currents

What package suits high-density board layouts?

It is supplied in an SC-70 surface-mount package that minimises board area and supports automated placement.

How does it perform in elevated ambient temperatures?

The device is specified for operation from -40 °C up to 175 °C, allowing use in harsh thermal environments typical of under‑bonnet automotive locations.

What drive voltage range should be applied to the gate?

The maximum permissible gate‑to‑source voltage is 8V, so gate drivers should be selected to remain within this limit.

How does the device balance switching speed and gate drive energy?

With a typical gate charge of 0.6 nC it requires relatively low energy to switch, aiding efficiency in systems with repetitive transitions.