Infineon HEXFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC

N° de stock RS:: 165-5714
Référence fabricant:: IRF7855TRPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC

Sous-total (1 bobine de 4000 unités)*

2 444,00 €

(TVA exclue)

2 956,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	la bobine*
4000 +	0,611 €	2 444,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-5714
Référence fabricant:: IRF7855TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Power Dissipation Pd	2.5W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.5mm
	Length	5mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Power Dissipation Pd 2.5W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.5mm
	Length 5mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - IRF7855TRPBF

This MOSFET is a high-current N-channel transistor designed for switching and power-management tasks in surface-mounted assemblies. It operates across a wide temperature range for industrial use and is suited to applications requiring low conduction losses and fast gate response. The device is supplied in an 8-pin SOIC package for compact PCB mounting and supports moderate power dissipation in continuous operation.

Features and Benefits:

• 60V drain rating enables switching in medium-voltage systems
• 12A continuous drain current supports elevated load currents
• 9.4mΩ low Rds(on) reduces conduction losses under load
• 26nC typical gate charge ensures responsive switching control
• 20V gate tolerance allows flexible drive voltages
• 2.5W power dissipation manages thermal load in confined spaces

Applications

• Suitable for power rails in industrial control equipment
• Used with motor drivers requiring high-current switching
• Ideal for DC-DC converters in compact power supplies
• Can be used for load switching in telecoms equipment
• Suitable for surface-mount designs requiring SOIC packages

What temperature range can it reliably withstand in operation?

It operates from -55°C up to 150°C, accommodating harsh industrial thermal environments.

How does the package type affect PCB layout considerations?

The 8-pin SOIC footprint requires attention to thermal vias and copper area to dissipate its 2.5W maximum power loss effectively.

What electrical characteristic determines conduction efficiency at high currents?

The device’s maximum drain-source resistance of 9.4mΩ primarily governs conduction losses during sustained current flow.

How should gate drive be dimensioned for efficient switching?

Design gate drivers to supply sufficient charge for the typical 26nC Qg to balance switching speed against drive energy and EMI.