Nexperia Single 1 Type N-Channel MOSFET Enhancement, 4-Pin DFN PMXB43UNEZ
- N° de stock RS:
- 153-0741
- Référence fabricant:
- PMXB43UNEZ
- Fabricant:
- Nexperia
Sous-total (1 bobine de 5000 unités)*
945,00 €
(TVA exclue)
1 145,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 09 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,189 € | 945,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 153-0741
- Référence fabricant:
- PMXB43UNEZ
- Fabricant:
- Nexperia
Spécifications
Documentation technique
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Package Type | DFN | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.36mm | |
| Width | 1.05 mm | |
| Length | 1.15mm | |
| Number of Elements per Chip | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Package Type DFN | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 0.36mm | ||
Width 1.05 mm | ||
Length 1.15mm | ||
Number of Elements per Chip 1 | ||
N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance RDSon = 42 mΩ
1 kV ESD protected
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
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