Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ
- N° de stock RS:
- 151-3178
- Référence fabricant:
- PMDXB600UNEZ
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
6,85 €
(TVA exclue)
8,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,274 € | 6,85 € |
| 125 - 1225 | 0,168 € | 4,20 € |
| 1250 - 2475 | 0,129 € | 3,23 € |
| 2500 - 3725 | 0,123 € | 3,08 € |
| 3750 + | 0,117 € | 2,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-3178
- Référence fabricant:
- PMDXB600UNEZ
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Maximum Power Dissipation Pd | 4.03W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.05 mm | |
| Standards/Approvals | No | |
| Height | 0.4mm | |
| Length | 1.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Maximum Power Dissipation Pd 4.03W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.05 mm | ||
Standards/Approvals No | ||
Height 0.4mm | ||
Length 1.15mm | ||
Automotive Standard No | ||
N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
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