Nexperia Type N-Channel MOSFET, 61 A, 60 V Enhancement, 4-Pin LFPAK PSMN011-60MSX
- N° de stock RS:
- 152-5575
- Référence fabricant:
- PSMN011-60MSX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
22,375 €
(TVA exclue)
27,075 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,895 € | 22,38 € |
| 125 - 225 | 0,701 € | 17,53 € |
| 250 - 600 | 0,674 € | 16,85 € |
| 625 - 1225 | 0,643 € | 16,08 € |
| 1250 + | 0,56 € | 14,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-5575
- Référence fabricant:
- PSMN011-60MSX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 91W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.9mm | |
| Width | 2.7 mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 91W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 0.9mm | ||
Width 2.7 mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33, Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
LFPAK33 package is footprint compatible with other 3.3mm types
Qualified to 175 °C
AC-to-DC converters
Synchronous rectification
DC-DC converters
Liens connexes
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