Nexperia BUK9M8560E Type N-Channel MOSFET, 12.8 A, 60 V Enhancement, 4-Pin LFPAK BUK9M85-60EX
- N° de stock RS:
- 153-0662
- Référence fabricant:
- BUK9M85-60EX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
13,45 €
(TVA exclue)
16,275 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 1 500 unité(s) expédiée(s) à partir du 17 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,538 € | 13,45 € |
| 125 - 225 | 0,339 € | 8,48 € |
| 250 - 600 | 0,321 € | 8,03 € |
| 625 - 1225 | 0,307 € | 7,68 € |
| 1250 + | 0,259 € | 6,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 153-0662
- Référence fabricant:
- BUK9M85-60EX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | BUK9M8560E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 192mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.6 mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series BUK9M8560E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 192mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Operating Temperature 175°C | ||
Width 2.6 mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
N-channel 60 V, 85 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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