Nexperia Type N-Channel MOSFET, 76 A, 60 V Enhancement, 5-Pin LFPAK PSMN8R5-60YS,115
- N° de stock RS:
- 152-5537
- Référence fabricant:
- PSMN8R5-60YS,115
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
36,65 €
(TVA exclue)
44,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 13 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 1,466 € | 36,65 € |
| 125 - 225 | 1,026 € | 25,65 € |
| 250 - 600 | 0,894 € | 22,35 € |
| 625 - 1225 | 0,85 € | 21,25 € |
| 1250 + | 0,806 € | 20,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-5537
- Référence fabricant:
- PSMN8R5-60YS,115
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 18.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 106W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Length | 5mm | |
| Width | 4.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 18.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 106W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Length 5mm | ||
Width 4.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET, Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
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