Infineon OptiMOS 2 N-Channel MOSFET, 69 A, 100 V Enhancement, 3-Pin TO-220 IPP12CN10LGXKSA1
- N° de stock RS:
- 145-8707
- Référence fabricant:
- IPP12CN10LGXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
41,15 €
(TVA exclue)
49,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 12 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,823 € | 41,15 € |
| 100 - 200 | 0,741 € | 37,05 € |
| 250 + | 0,664 € | 33,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-8707
- Référence fabricant:
- IPP12CN10LGXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Height 15.95mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon OptiMOS 2 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP12CN10LGXKSA1
- Infineon OptiMOS N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP100N08S2L07AKSA1
- Infineon OptiMOS 3 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP037N08N3GXKSA1
- Infineon OptiMOS 3 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPA086N10N3GXKSA1
- Infineon OptiMOS 3 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP180N10N3GXKSA1