Infineon OptiMOS 3 N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-220 IPA086N10N3GXKSA1
- N° de stock RS:
- 145-8705
- Référence fabricant:
- IPA086N10N3GXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
76,20 €
(TVA exclue)
92,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 700 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,524 € | 76,20 € |
| 100 - 200 | 1,28 € | 64,00 € |
| 250 - 450 | 1,204 € | 60,20 € |
| 500 - 950 | 1,113 € | 55,65 € |
| 1000 + | 1,036 € | 51,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-8705
- Référence fabricant:
- IPA086N10N3GXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 37.5W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.85mm | |
| Length | 10.65mm | |
| Height | 16.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 37.5W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.85mm | ||
Length 10.65mm | ||
Height 16.15mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1
This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its Durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.
Features & Benefits
• N-channel configuration optimises current management
• Low on-resistance enhances overall system efficiency
• Operates at temperatures up to +175°C for adaptable applications
• Fully isolated package improves safety during operation
• Compliant with RoHS and halogen-free standards for eco-friendly use
Applications
• Ideal for high-frequency switching in electronic devices
• Employed in synchronous rectification to maximise efficiency
• Suitable for requiring high current handling
• Effective in temperature-sensitive environments due to robust thermal performance
What is the significance of the low on-resistance feature in this device?
The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.
Can this MOSFET be used in automotive applications?
Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.
How does the gate threshold voltage influence circuit function?
The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.
What types of circuits are most compatible with this power transistor?
This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.
How should the MOSFET be mounted for optimal performance?
The MOSFET should be mounted using the through-hole method to ensure secure connections and effective heat dissipation based on its thermal resistance specifications.
Liens connexes
- Infineon OptiMOS 3 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPA086N10N3GXKSA1
- Infineon OptiMOS 3 N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220