Infineon HEXFET N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-220AB AUIRFB3207

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
145-8617
Référence fabricant:
AUIRFB3207
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.82mm

Transistor Material

Si

Typical Gate Charge @ Vgs

180 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.66mm

Minimum Operating Temperature

-55 °C

Height

16.51mm

Pays d'origine :
MX

Automotive N-Channel Power MOSFET, Infineon


Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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