onsemi SupreMOS Type N-Channel MOSFET, 45.8 A, 600 V Enhancement, 3-Pin TO-247

Offre groupée disponible

Sous-total (1 tube de 30 unités)*

194,73 €

(TVA exclue)

235,62 €

(TVA incluse)

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Dernier stock RS
  • 90 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité
Prix par unité
le tube*
30 - 306,491 €194,73 €
60 +6,166 €184,98 €

*Prix donné à titre indicatif

N° de stock RS:
145-5482
Référence fabricant:
FCH47N60NF
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45.8A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

SupreMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

368W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

121nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

20.82mm

Standards/Approvals

RoHS Compliant

Width

4.82 mm

Length

15.87mm

Automotive Standard

No

SupreMOS® MOSFET, Fairchild Semiconductor


Fairchild brings a new generation of 600V Super-Junction MOSFETs - SupreMOS®.

The combination of their low RDS(on) and total gate charge brings a 40 percent lower Figure of Merit (FOM) compared to Fairchild's 600V SuperFET™ MOSFETs. In addition, the SupreMOS family offers a low gate charge for the same RDS(on), providing excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency.

These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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