onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 NTHL099N60S5
- N° de stock RS:
- 230-9089
- Référence fabricant:
- NTHL099N60S5
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,14 €
(TVA exclue)
7,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 274 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,14 € |
| 10 - 99 | 5,29 € |
| 100 + | 4,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 230-9089
- Référence fabricant:
- NTHL099N60S5
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | SUPERFET V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.07mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series SUPERFET V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 175°C | ||
Height 41.07mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.
Ultra Low Gate Charge (Typ. Qg= 48 nC)
Low switching loss
Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)
Low switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
650 V @ TJ = 150°C
Typ. RDS(on) = 79.2 m Ω
100% Avalanche Tested
RoHS Compliant
Internal Gate Resistance: 6.9 Ω
Liens connexes
- onsemi SUPERFET V Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- onsemi SUPERFET V Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- onsemi SUPERFET V Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 NTHL041N60S5H
- onsemi SuperFET II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- onsemi SuperFET II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- onsemi SuperFET II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 FCH041N60E
- onsemi SuperFET II Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 FCH041N60F
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247