onsemi QFET Type N-Channel MOSFET, 8.8 A, 250 V Enhancement, 3-Pin TO-220F FQPF9N25C

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
145-5379
Référence fabricant:
FQPF9N25C
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-220F

Series

QFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

430mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-30/30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

38W

Maximum Operating Temperature

150°C

Length

10.16mm

Height

9.19mm

Standards/Approvals

RoHS

Width

4.7 mm

Pays d'origine :
CN

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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