onsemi QFET Type N-Channel MOSFET, 19 A, 200 V Enhancement, 3-Pin TO-220 FQPF19N20C

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Offre groupée disponible

Sous-total (1 tube de 50 unités)*

48,20 €

(TVA exclue)

58,30 €

(TVA incluse)

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  • Plus 550 unité(s) expédiée(s) à partir du 29 décembre 2025
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Unité
Prix par unité
le tube*
50 - 500,964 €48,20 €
100 +0,906 €45,30 €

*Prix donné à titre indicatif

N° de stock RS:
145-4534
Référence fabricant:
FQPF19N20C
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

200V

Series

QFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

40.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

43W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Height

9.19mm

Width

4.7 mm

Standards/Approvals

No

Length

10.16mm

Automotive Standard

No

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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