Toshiba Type P-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin SOT-23 SSM3J334R,LF(T
- N° de stock RS:
- 144-5260
- Référence fabricant:
- SSM3J334R,LF(T
- Fabricant:
- Toshiba
Temporairement en rupture de stock
- N° de stock RS:
- 144-5260
- Référence fabricant:
- SSM3J334R,LF(T
- Fabricant:
- Toshiba
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 136mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.9nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 136mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.9nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Automotive Standard No | ||
- Pays d'origine :
- JP
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
Liens connexes
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- Toshiba Type P-Channel MOSFET 60 V, 3-Pin SOT-23
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- Toshiba Type N-Channel MOSFET 30 VLF(T