onsemi PowerTrench Type N-Channel Power MOSFET, 79 A, 150 V Enhancement, 3-Pin TO-220AB
- N° de stock RS:
- 124-1748
- Référence fabricant:
- FDP2532
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
111,85 €
(TVA exclue)
135,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 800 unité(s) expédiée(s) à partir du 01 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 2,237 € | 111,85 € |
| 100 - 200 | 2,148 € | 107,40 € |
| 250 + | 2,081 € | 104,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1748
- Référence fabricant:
- FDP2532
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220AB | |
| Series | PowerTrench | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.016Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 310W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.016Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 310W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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