onsemi BSS138K Type N-Channel MOSFET, 220 mA, 50 V Enhancement, 3-Pin SOT-23 BSS138K
- N° de stock RS:
- 761-4401
- Numéro d'article Distrelec:
- 304-45-643
- Référence fabricant:
- BSS138K
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 100 unités)*
8,00 €
(TVA exclue)
10,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 200 unité(s) expédiée(s) à partir du 16 février 2026
- Plus 10 100 unité(s) expédiée(s) à partir du 23 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 100 - 400 | 0,08 € | 8,00 € |
| 500 - 900 | 0,069 € | 6,90 € |
| 1000 + | 0,06 € | 6,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 761-4401
- Numéro d'article Distrelec:
- 304-45-643
- Référence fabricant:
- BSS138K
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 220mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSS138K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 220mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSS138K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Length 2.92mm | ||
Height 0.93mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi BSS138K Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23
- onsemi BSS138 Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23
- onsemi BSS138 Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23 BSS138
- onsemi BSS138L Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23
- onsemi BVSS13L Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23
- onsemi BSS84 Type P-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23
- onsemi BSS138L Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23 BSS138LT1G
- onsemi BVSS13L Type N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23 BVSS138LT1G