onsemi PowerTrench P-Channel MOSFET, 11 A, 40 V, 8-Pin SOIC FDS4675-F085

Voir l’ensemble des MOSFETs
Informations sur le stock actuellement non accessibles
N° de stock RS:
124-1444
Référence fabricant:
FDS4675-F085
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

21 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.9mm

Length

4.9mm

Typical Gate Charge @ Vgs

40 nC @ 4.5 V

Transistor Material

Si

Height

1.575mm

Minimum Operating Temperature

-55 °C

Pays d'origine :
US

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes