onsemi PowerTrench Type P-Channel MOSFET, 11 A, 20 V Enhancement, 8-Pin SOIC FDS6576

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Sous-total (1 paquet de 10 unités)*

11,35 €

(TVA exclue)

13,73 €

(TVA incluse)

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Dernier stock RS
  • 17 060 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
le paquet*
10 +1,135 €11,35 €

*Prix donné à titre indicatif

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N° de stock RS:
917-5487
Référence fabricant:
FDS6576
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

20V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.014Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

±12 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43nC

Maximum Operating Temperature

150°C

Height

1.5mm

Length

5mm

Width

4 mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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