Vishay S N-Channel MOSFET, 27 A, 650 V N, 3-Pin TO-263 SIHB135N65S-GE3
- N° de stock RS:
- 878-897
- Référence fabricant:
- SIHB135N65S-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,62 €
(TVA exclue)
1,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,62 € |
| 10 - 99 | 1,08 € |
| 100 - 499 | 0,91 € |
| 500 - 999 | 0,88 € |
| 1000 + | 0,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 878-897
- Référence fabricant:
- SIHB135N65S-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | S | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.121Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series S | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.121Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay power MOSFET delivers exceptional performance for energy-efficient applications. Specifically designed for demanding power management, it ensures minimal losses during operation, enhancing overall system reliability and efficiency.
Utilises the latest SF series technology for cutting-edge efficiency
Exhibits low figure of merit, significantly reducing power dissipation
Offers lower effective capacitance for improved switching performance
Avalanche energy rated to withstand harsh conditions
Single configuration optimises space and simplifies design
Liens connexes
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- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T5-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3
- Vishay N-Channel N-Channel Mosfet 200 V, 3-Pin TO-263 SUM90140E-GE3