Infineon CoolSiC N channel-Channel Power MOSFET, 100 A, 1400 V Enhancement, 4-Pin PG-TO247-4 IMYR140R019M2HXLSA1
- N° de stock RS:
- 762-947
- Référence fabricant:
- IMYR140R019M2HXLSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
17,77 €
(TVA exclue)
21,50 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 17,77 € |
| 10 - 24 | 16,00 € |
| 25 + | 13,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-947
- Référence fabricant:
- IMYR140R019M2HXLSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1400V | |
| Package Type | PG-TO247-4 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 385W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 23.8mm | |
| Height | 4.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1400V | ||
Package Type PG-TO247-4 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 385W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Operating Temperature 175°C | ||
Length 23.8mm | ||
Height 4.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC 1400 V G2 SiC MOSFET features a 1400 V rating and a current capability of 147 A at 100°C, with a low on-resistance of 8.5 mΩ. It supports high thermal performance and can withstand short circuits for 2 μs. The device is designed with robust parasitic turn-on protection and a high creepage distance.
Very low switching losses
Robust body diode for hard commutation
Wide power pins for high current capability
Resistive weldable pins for direct busbar connections
Liens connexes
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- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R090M1HXKSA1