Infineon CoolSiC Type N-Channel MOSFET, 89 A, 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R016M1HXKSA1
- N° de stock RS:
- 349-339
- Référence fabricant:
- IMZA75R016M1HXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
28,68 €
(TVA exclue)
34,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 240 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 28,68 € |
| 10 - 99 | 25,81 € |
| 100 + | 23,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-339
- Référence fabricant:
- IMZA75R016M1HXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | CoolSiC | |
| Package Type | PG-TO247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series CoolSiC | ||
Package Type PG-TO247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon 750 V CoolSiC Power Device G1 is built on Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the unique characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. It is specifically designed for high temperature and harsh operating conditions, enabling the simplified and cost effective deployment of systems with the highest efficiency. This MOSFET is perfect for applications requiring robust performance and energy efficient solutions.
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
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