Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

Offre groupée disponible
Consulter les options de prix de gros

Sous-total (1 unité)*

19,16 €

(TVA exclue)

23,18 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • Plus 19 unité(s) expédiée(s) à partir du 10 août 2026
  • Plus 240 unité(s) expédiée(s) à partir du 05 août 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité
Prix par unité
1 - 919,16 €
10 - 9917,24 €
100 +15,91 €

*Prix donné à titre indicatif

N° de stock RS:
349-334
Référence fabricant:
IMZA65R015M2HXKSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

103A

Maximum Drain Source Voltage Vds

650V

Series

CoolSiC

Package Type

PG-TO247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

79nC

Maximum Power Dissipation Pd

341W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon CoolSiC Series MOSFET, 650V Drain Source Voltage, 103A Continuous Drain Current - IMZA65R015M2HXKSA1


This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding industrial environments. It operates as an N-channel enhancement device and is supplied in a four-pin PG-TO247-4 through-hole package suited to heat-sinking and conventional assembly methods. The component supports continuous high-current operation and is specified for wide-temperature use, making it appropriate for systems requiring sustained power handling at elevated junction temperatures.

Features and Benefits:


• 650V drain voltage enables high-voltage switching applications
• 103A continuous drain current supports heavy current loads
• 18 mΩ RDS(on) reduces conduction losses for higher efficiency
• 79 nC typical gate charge affords predictable switching behaviour
• 341W maximum power dissipation allows substantial thermal loading
• Rated from -55 °C to 175 °C suits extreme-temperature operation

Applications


• Suitable for industrial motor drive power stages
• Ideal for high-voltage power supplies and inverters
• Used with robust heat-sink assemblies in converters
• Can be used for high-current DC-DC conversion systems
• Appropriate for replacement in through-hole power electronics

What package and mounting method does it use?


It comes in a PG-TO247-4 package with through-hole mounting for soldered or bolted heat-sink attachment.

How does the gate specification affect switching design?


The typical gate charge of 79 nC indicates gate-drive energy and influences chosen driver strength and switching-speed trade-offs.

What thermal limits should designers consider?


The device can dissipate up to 341W under specified conditions and is rated to operate up to 175 °C for high-temperature system designs.

Is it suitable for automotive standard requirements?


It is not specified as meeting automotive standard approvals and should be assessed against automotive qualification needs.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.