Infineon CoolSiC N channel-Channel Power MOSFET, 28 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R075M2HXTMA1
- N° de stock RS:
- 762-918
- Référence fabricant:
- IMBG65R075M2HXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,24 €
(TVA exclue)
7,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 28 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,24 € |
| 10 - 99 | 4,18 € |
| 100 - 499 | 3,02 € |
| 500 - 999 | 2,89 € |
| 1000 + | 2,71 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-918
- Référence fabricant:
- IMBG65R075M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-TO263-7 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 124W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.2mm | |
| Standards/Approvals | RoHS | |
| Height | 4.5mm | |
| Length | 15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-TO263-7 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 124W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.2mm | ||
Standards/Approvals RoHS | ||
Height 4.5mm | ||
Length 15mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Ultra‑low switching losses
Enhances system robustness and reliability
Facilitates great ease of use and integration
Reduces the size, weight and bill of materials of the systems
Liens connexes
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