Infineon CoolSiC Type N-Channel MOSFET, 238 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1
- N° de stock RS:
- 349-322
- Référence fabricant:
- IMBG65R007M2HXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
30,66 €
(TVA exclue)
37,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 753 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 30,66 € |
| 10 - 99 | 27,60 € |
| 100 + | 25,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-322
- Référence fabricant:
- IMBG65R007M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 238A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 179nC | |
| Maximum Power Dissipation Pd | 789W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 238A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 179nC | ||
Maximum Power Dissipation Pd 789W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon CoolSiC Series MOSFET, 650V Maximum Drain Source Voltage, 238A Maximum Continuous Drain Current - IMBG65R007M2HXTMA1
This MOSFET is a silicon carbide, N-channel enhancement device designed for high-voltage switching and power conversion tasks. It operates across a wide ambient range, making it suitable for demanding thermal environments, and is supplied in a surface-mount power package for integration into compact assemblies.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications
• 8.5mΩ Rds(on) delivers low conduction losses for efficiency
• 238A continuous drain current supports heavy current loads
• 789W maximum power dissipation handles significant thermal stress
• 179nC typical gate charge permits predictable gate-drive requirements
• PG-TO263-7 surface-mount package eases PCB assembly for mass production
• 8.5mΩ Rds(on) delivers low conduction losses for efficiency
• 238A continuous drain current supports heavy current loads
• 789W maximum power dissipation handles significant thermal stress
• 179nC typical gate charge permits predictable gate-drive requirements
• PG-TO263-7 surface-mount package eases PCB assembly for mass production
Applications
• Suitable for inverters in industrial power systems
• Ideal for high-power motor drives and traction converters
• Used with renewable-energy converters and power optimisers
• Can be used for high-voltage DC-DC conversion stages
• Employed in uninterruptible power supplies and grid-tied systems
• Ideal for high-power motor drives and traction converters
• Used with renewable-energy converters and power optimisers
• Can be used for high-voltage DC-DC conversion stages
• Employed in uninterruptible power supplies and grid-tied systems
What thermal range can it tolerate in harsh installations?
It is rated to function from -55°C up to 175°C, allowing operation in extreme temperature environments.
What gate-drive constraints should be observed for safe operation?
Gate-to-source voltage must not exceed 23V to avoid stressing the gate structure.
How many pins does the package present for PCB layout considerations?
The component uses a seven-pin configuration that suits standard surface-mount placement.
Is this device suitable for automotive-specific certification requirements?
It is not classified under automotive-grade standards but is RoHS compliant.
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