Infineon CoolSiC Type N-Channel MOSFET, 115 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R015M2HXTMA1
- N° de stock RS:
- 349-323
- Référence fabricant:
- IMBG65R015M2HXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
19,27 €
(TVA exclue)
23,32 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 19,27 € |
| 10 - 99 | 17,35 € |
| 100 + | 16,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-323
- Référence fabricant:
- IMBG65R015M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 416W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 416W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon 650 V CoolSiC MOSFET G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, meeting the ever growing needs of modern power systems and markets. It is ideal for applications where high efficiency and robust performance are required, providing a reliable solution for a wide range of power electronics.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
Liens connexes
- Infineon IMB SiC N-Channel MOSFET 650 V, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 650 V, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 650 V, 7-Pin PG-TO263-7 IMBG65R040M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 650 V, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R040M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R078M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R026M2HXTMA1