Vishay SQA462CEJW N channel-Channel MOSFET, 5.63 A, 60 V Enhancement, 6-Pin PowerPAK SC-70W-6L SQA462CEJW-T1_GE3
- N° de stock RS:
- 735-124
- Référence fabricant:
- SQA462CEJW-T1_GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
0,89 €
(TVA exclue)
1,08 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 28 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 24 | 0,89 € |
| 25 - 99 | 0,58 € |
| 100 - 499 | 0,31 € |
| 500 + | 0,29 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 735-124
- Référence fabricant:
- SQA462CEJW-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.63A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SC-70W-6L | |
| Series | SQA462CEJW | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.038Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 27W | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 2.05mm | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.63A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SC-70W-6L | ||
Series SQA462CEJW | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.038Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 27W | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 2.05mm | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- DE
The Vishay Power MOSFET is a high-performance component designed for automotive applications. It features robust capabilities for managing electrical loads efficiently, ensuring reliability in demanding conditions.
Characterised by low on-state resistance for improved efficiency
100% R and UIS tested for reliability under stress conditions
Suitable for high-temperature operations, with a range up to 175 °C
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