DiodesZetex DMP3013SFV P-Channel MOSFET, -35 A, -30 V Enhancement, 8-Pin PowerDI3333-8 DMP3013SFV-7
- N° de stock RS:
- 719-554
- Référence fabricant:
- DMP3013SFV-7
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
1,76 €
(TVA exclue)
2,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 940 unité(s) expédiée(s) à partir du 04 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,352 € | 1,76 € |
| 50 - 120 | 0,31 € | 1,55 € |
| 125 - 495 | 0,278 € | 1,39 € |
| 500 + | 0,24 € | 1,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-554
- Référence fabricant:
- DMP3013SFV-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -35A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PowerDI3333-8 | |
| Series | DMP3013SFV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 31W | |
| Typical Gate Charge Qg @ Vgs | 33.7nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -35A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PowerDI3333-8 | ||
Series DMP3013SFV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 31W | ||
Typical Gate Charge Qg @ Vgs 33.7nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.4mm | ||
Length 3.4mm | ||
Height 0.85mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The DiodesZetex 30V P-Channel enhancement mode MOSFET, designed to provide superior switching performance while minimising on-state resistance. Its Compact PowerDI3333-8 packaging is thermally efficient, enabling higher density in end products. This MOSFET is particularly suited for high-efficiency power management applications, offering significant advantages in design flexibility and space optimisation.
Small form factor reduces board area by 33% compared to SO-8 packages
Thermally efficient design allows for higher density in end products
ESD protected gate increases reliability in sensitive applications
Totally lead-free and fully RoHS compliant, ensuring environmental safety
Halogen and antimony free, making it a 'green' device
Weight is approximately 0.03 grams, facilitating lightweight designs
Meets UL flammability classification rating of 94V-0 for enhanced safety
Liens connexes
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