DiodesZetex DMP6023LFG P-Channel MOSFET, -10.3 A, -60 V Enhancement, 8-Pin PowerDI3333-8 DMP6023LFG-7
- N° de stock RS:
- 719-494
- Référence fabricant:
- DMP6023LFG-7
- Fabricant:
- DiodesZetex
Sous-total (1 bobine de 2000 unités)*
908,00 €
(TVA exclue)
1 098,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 0,454 € | 908,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-494
- Référence fabricant:
- DMP6023LFG-7
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -10.3A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | DMP6023LFG | |
| Package Type | PowerDI3333-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 53.1nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.35 mm | |
| Height | 0.85mm | |
| Length | 3.35mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -10.3A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series DMP6023LFG | ||
Package Type PowerDI3333-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 53.1nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Operating Temperature 150°C | ||
Width 3.35 mm | ||
Height 0.85mm | ||
Length 3.35mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The DiodesZetex P Channel enhancement mode MOSFET, specifically designed to deliver optimal efficiency in power management applications. This device features exceptional low on-state resistance, ensuring minimal power loss during operation. It is housed in a Compact POWERDI 3333-8 package, which not only optimises thermal management but also significantly reduces the footprint on printed circuit boards, facilitating smaller and more efficient end products. Designed with superior switching performance in mind, it meets the stringent requirements of automotive and industrial applications by providing reliability and durability, thus making it an Ideal choice for engineers needing effective power handling solutions.
Low RDS(ON) ensures on-state losses are minimised for improved efficiency
Qualified to AEC-Q101 standards, ensuring reliability in demanding environments
Maintains superior switching performance for effective power management
Supports a continuous drain current of -7.7A at +25°C, catering to a wide range of applications
Complete with multiple packaging options for flexibility in application integration
Low thermal resistance junction-to-ambient promotes excellent heat dissipation
Ideal for automotive and high-reliability applications, reinforcing performance and safety
Liens connexes
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