ROHM R8011KNZ4 N-Channel Single MOSFETs, 11 A, 800 V Enhancement, 3-Pin TO-247 R8011KNZ4C13
- N° de stock RS:
- 687-457
- Référence fabricant:
- R8011KNZ4C13
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 sachet de 2 unités)*
8,42 €
(TVA exclue)
10,18 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 25 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | Le Sachet* |
|---|---|---|
| 2 - 18 | 4,21 € | 8,42 € |
| 20 - 98 | 3,71 € | 7,42 € |
| 100 - 198 | 3,33 € | 6,66 € |
| 200 + | 2,62 € | 5,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-457
- Référence fabricant:
- R8011KNZ4C13
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | R8011KNZ4 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.45Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.22mm | |
| Length | 40mm | |
| Standards/Approvals | RoHS | |
| Width | 16.24mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series R8011KNZ4 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.45Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Operating Temperature 150°C | ||
Height 5.22mm | ||
Length 40mm | ||
Standards/Approvals RoHS | ||
Width 16.24mm | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed to deliver exceptional efficiency and reliability in various applications. With a voltage rating of 800V and a maximum continuous drain current of 11A, this component excels in demanding environments. Engineered for fast switching, it features a low on-resistance of just 0.45Ω, enabling reduced power loss and efficient thermal management. Its robust construction ensures compliance with environmental standards, including RoHS, making it a practical choice for modern electronic designs that prioritise sustainability along with performance.
Low on resistance ensures efficient power delivery
Fast switching capability optimises performance in high-speed applications
Robust construction supports parallel use, enhancing design flexibility
Compliant with RoHS standards, contributing to environmentally friendly designs
Wide operating temperature range from -55 to +150°C ensures reliability in extreme conditions
Thermal resistance ratings provide excellent heat management in compact designs
Effective gate charge characteristics allow for easier integration into existing circuits
Versatile applications in industrial, automotive, and consumer electronics sectors
Liens connexes
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