Infineon CoolMOS C3 Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 911-4940
- Référence fabricant:
- SPW11N80C3FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
41,76 €
(TVA exclue)
50,52 €
(TVA incluse)
Ajouter 60 unités pour bénéficier d'une livraison gratuite
En stock
- 3 660 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 1,392 € | 41,76 € |
| 60 - 120 | 1,35 € | 40,50 € |
| 150 - 270 | 1,308 € | 39,24 € |
| 300 + | 1,262 € | 37,86 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 911-4940
- Référence fabricant:
- SPW11N80C3FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Series | CoolMOS C3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Width | 5.16 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Series CoolMOS C3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Length 16.13mm | ||
Width 5.16 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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