ROHM R8019KNZ4 N-Channel Single MOSFETs, 19 A, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13
- N° de stock RS:
- 687-367
- Référence fabricant:
- R8019KNZ4C13
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 sachet de 2 unités)*
11,45 €
(TVA exclue)
13,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | Le Sachet* |
|---|---|---|
| 2 - 18 | 5,725 € | 11,45 € |
| 20 - 98 | 5,04 € | 10,08 € |
| 100 - 198 | 4,525 € | 9,05 € |
| 200 + | 3,56 € | 7,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-367
- Référence fabricant:
- R8019KNZ4C13
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Series | R8019KNZ4 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.265Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.22mm | |
| Length | 40mm | |
| Width | 16.24mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Series R8019KNZ4 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.265Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.22mm | ||
Length 40mm | ||
Width 16.24mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel MOSFET designed for high-efficiency performance in electronic applications. Featuring a maximum Drain-Source voltage of 800V and a continuous drain current capability of 19A, this device effectively manages significant power loads while maintaining low on-resistance. Engineered with advanced switching capabilities, it provides rapid response times essential for efficient circuit operation. The encapsulation in a TO-247G package ensures straightforward mounting and excellent thermal performance, making it ideal for power management in everything from industrial systems to consumer electronics.
Low on resistance of just 0.265Ω, enhancing energy efficiency
Rated for continuous drain current of ±19A, allowing substantial power handling
Fast switching performance optimises the operation of dynamic circuits
Pb free lead plating ensures compliance with environmental standards
Robust avalanche ratings support reliable operation in transient conditions
Ideal for parallel usage, simplifying multiple device configurations.
Liens connexes
- ROHM R8011KNZ4 N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-247 R8011KNZ4C13
- ROHM R80 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220FM R8019KNXC7G
- ROHM N-Channel MOSFET 750 V Enhancement, 3-Pin TO-247
- ROHM N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- ROHM N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- ROHM N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- ROHM N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- ROHM N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247