ROHM SCT4036KWA Type N-Channel Single MOSFETs, 40 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4036KWATL
- N° de stock RS:
- 687-344
- Référence fabricant:
- SCT4036KWATL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
23,88 €
(TVA exclue)
28,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 avril 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 8 | 11,94 € | 23,88 € |
| 10 + | 11,585 € | 23,17 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-344
- Référence fabricant:
- SCT4036KWATL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7LA | |
| Series | SCT4036KWA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.4mm | |
| Standards/Approvals | RoHS | |
| Height | 4.5mm | |
| Width | 10.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7LA | ||
Series SCT4036KWA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Gate Source Voltage Vgs 21V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 150°C | ||
Length 15.4mm | ||
Standards/Approvals RoHS | ||
Height 4.5mm | ||
Width 10.2mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TH
The ROHM N channel SiC power MOSFET, engineered for high-performance applications requiring efficient switching capabilities. With a maximum drain-source voltage of 1200V and a typical on-resistance of 36mΩ, this device excels in demanding environments like solar inverters and DC/DC converters. Its robust design features a high continuous drain current rating of 40A at 25°C, supporting versatility in various applications. The device is optimised for fast switching, providing enhanced efficiency. Additionally, its Pb-free lead plating complies with RoHS standards, ensuring an eco-friendly approach without compromising on performance.
Delivers low on resistance for minimal power loss during operation
Supports a wide range of continuous and pulsed drain currents for enhanced flexibility in design
Optimised for fast switching speeds, contributing to improved overall efficiency
Features robust thermal resistance capabilities, allowing for reliable operation at elevated temperatures
Incorporates a simple gate drive design, facilitating easier integration into existing systems
Compliant with environmental regulations through Pb free lead plating, aligning with contemporary sustainability practices
Offers a wide creepage distance of 4.7mm, enhancing reliability in high-voltage applications
Liens connexes
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