ROHM SCT4018KWA Type N-Channel Single MOSFETs, 75 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4018KWATL
- N° de stock RS:
- 687-342
- Référence fabricant:
- SCT4018KWATL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
46,99 €
(TVA exclue)
56,858 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 8 | 23,495 € | 46,99 € |
| 10 + | 22,795 € | 45,59 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-342
- Référence fabricant:
- SCT4018KWATL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7LA | |
| Series | SCT4018KWA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Power Dissipation Pd | 267W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.2mm | |
| Length | 15.4mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7LA | ||
Series SCT4018KWA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Power Dissipation Pd 267W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 21V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.2mm | ||
Length 15.4mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TH
The ROHM N channel SiC power MOSFET, designed for efficient power management in a variety of applications. With a maximum drain-source voltage of 1200V and a low on-resistance of 18mΩ, this MOSFET optimises performance in high-efficiency systems like solar inverters and induction heating. It provides robust thermal management with a junction temperature range of up to 175°C, ensuring reliable operation even in demanding environments. The device features a fast switching speed, making it ideal for applications requiring high-frequency switching, thereby enhancing overall system efficiency and performance.
Low on resistance ensures minimal energy loss during operation
Supports fast switching speeds for improved efficiency
Designed for easy parallel operation, facilitating scalability
Robust thermal characteristics enable operation in extreme conditions
Pb free lead plating complies with RoHS standards for environmental safety
Wide creepage distance of 4.7 mm enhances reliability in high-voltage applications
Ideal for various applications including solar inverters and DC/DC converters
Liens connexes
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