ROHM SCT4018KWA Type N-Channel Single MOSFETs, 75 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4018KWATL

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48,17 €

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58,286 €

(TVA incluse)

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le ruban*
2 - 824,085 €48,17 €
10 +23,365 €46,73 €

*Prix donné à titre indicatif

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N° de stock RS:
687-342
Référence fabricant:
SCT4018KWATL
Fabricant:
ROHM
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Marque

ROHM

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263-7LA

Series

SCT4018KWA

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

21 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

267W

Maximum Operating Temperature

150°C

Length

15.4mm

Width

10.2 mm

Height

4.5mm

Standards/Approvals

RoHS

Automotive Standard

No

Pays d'origine :
TH
The ROHM N channel SiC power MOSFET, designed for efficient power management in a variety of applications. With a maximum drain-source voltage of 1200V and a low on-resistance of 18mΩ, this MOSFET optimises performance in high-efficiency systems like solar inverters and induction heating. It provides robust thermal management with a junction temperature range of up to 175°C, ensuring reliable operation even in demanding environments. The device features a fast switching speed, making it ideal for applications requiring high-frequency switching, thereby enhancing overall system efficiency and performance.

Low on resistance ensures minimal energy loss during operation

Supports fast switching speeds for improved efficiency

Designed for easy parallel operation, facilitating scalability

Robust thermal characteristics enable operation in extreme conditions

Pb free lead plating complies with RoHS standards for environmental safety

Wide creepage distance of 4.7 mm enhances reliability in high-voltage applications

Ideal for various applications including solar inverters and DC/DC converters

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