STMicroelectronics Type N-Channel SiC Power Module, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120H

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N° de stock RS:
204-3952
Référence fabricant:
SCT30N120H
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Channel Type

Type N

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.09Ω

Channel Mode

Enhancement

Pays d'origine :
CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very tight variation of on-resistance vs. temperature

Very high operating junction temperature capability (TJ = 200°C)

Very fast and robust intrinsic body diode

Low capacitance