Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK
- N° de stock RS:
- 653-189
- Référence fabricant:
- SQS201CENW-T1_GE3
- Fabricant:
- Vishay
Sous-total (1 ruban de 1 unité)*
1,06 €
(TVA exclue)
1,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 1 373 unité(s) expédiée(s) à partir du 21 septembre 2026
- Plus 3 000 unité(s) expédiée(s) à partir du 29 septembre 2026
Ruban(s) | le ruban |
|---|---|
| 1 - 24 | 1,06 € |
| 25 - 99 | 1,02 € |
| 100 - 499 | 1,00 € |
| 500 - 999 | 0,85 € |
| 1000 + | 0,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-189
- Référence fabricant:
- SQS201CENW-T1_GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -16A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Series | SQS201CENW | |
| Package Type | PowerPAK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0800Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Height | 0.41mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -16A | ||
Maximum Drain Source Voltage Vds -100V | ||
Series SQS201CENW | ||
Package Type PowerPAK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0800Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 175°C | ||
Width 3.3mm | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Height 0.41mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Vishay SQS201CENW Series Single MOSFETs, 100V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3
Features and Benefits:
• 16A continuous current for heavy-load conduction
• 62.5W power dissipation enables sustained power handling
• 0.0800Ω low Rds(on) reduces conduction losses
• 26nC typical gate charge for efficient switching control
• ±20V gate tolerance supports robust drive signalling
Applications
• Ideal for reverse-polarity protection circuits in power rails
• Used with DC-DC converters requiring low conduction loss
• Can be used for motor driver high-side switching stages
• Appropriate for telematics and control modules in harsh climates
What thermal extremes can the device tolerate during operation?
What package style and mounting method does it use for PCB assembly?
How does the device support automotive applications?
What gate drive considerations should be observed for reliable switching?
Liens connexes
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