Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3

N° de stock RS:: 653-188
Référence fabricant:: SQS201CENW-T1_GE3
Fabricant:: Vishay

Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3

Sous-total (1 bobine de 3000 unités)*

1 446,00 €

(TVA exclue)

1 749,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	la bobine*
3000 +	0,482 €	1 446,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-188
Référence fabricant:: SQS201CENW-T1_GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	-16A
	Maximum Drain Source Voltage Vds	-100V
	Package Type	PowerPAK
	Series	SQS201CENW
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0800Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.1V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Length	3.30mm
	Height	0.41mm
	Width	3.30mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id -16A
	Maximum Drain Source Voltage Vds -100V
	Package Type PowerPAK
	Series SQS201CENW
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0800Ω
	Channel Mode Enhancement
	Forward Voltage Vf -1.1V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Length 3.30mm
	Height 0.41mm
	Width 3.30mm
	Automotive Standard AEC-Q101

Datasheet - SQS201CENW-T1_GE3

Pays d'origine :: CN

Vishay SQS201CENW Series Single MOSFETs, -100V Maximum Drain Source Voltage, -16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3

This single MOSFET is a P-channel enhancement device intended for power-switching functions in electronic systems, particularly where automotive-grade robustness is required. It is designed for PCB mounting in a PowerPAK package and offers a balance of current handling and voltage capability suited to demanding industrial and vehicular control environments.

Features and Benefits:

• P-channel device enabling high-side switching in circuits • 100V drain-to-source rating allowing large voltage margins • -16A continuous drain current for substantial load capability • 0.08Ω Rds(on) minimising conduction losses under load • 26nC typical gate charge supporting moderate switching speeds • 62.5W power dissipation handling significant thermal stress

Applications

• Suitable for high-side power switching in automotive modules • Ideal for motor-drive protection and control circuits • Used for battery management and power distribution systems • Can be used for industrial automation logic-level power stages

What gate voltage limits should be observed during design?

The gate-to-source excursion must not exceed 20V to prevent device stress.

How does the device behave at temperature extremes in practice?

It is specified to operate from -55°C up to 175°C, enabling use in harsh thermal environments without exceeding its rated limits.

What package considerations affect PCB layout and cooling?

The PowerPAK 8-pin footprint influences thermal conduction paths and requires adequate PCB copper for heat dissipation to make use of the 62.5W power-handling capacity.

Are there specific standards influencing selection for automotive use?

It meets the AEC‑Q101 automotive qualification, indicating suitability for vehicle electronic applications under that standard.